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The structure of InAlN/GaN heterostructures for high electron mobility transistors

Identifieur interne : 003680 ( Main/Repository ); précédent : 003679; suivant : 003681

The structure of InAlN/GaN heterostructures for high electron mobility transistors

Auteurs : RBID : Pascal:10-0292463

Descripteurs français

Pascal (Inist)
- Morphologie surface, Cristallinité, Microscopie force atomique, Couche interfaciale, Epaisseur, Mécanisme croissance, Microscopie électronique transmission, Structure îlot, Transistor mobilité électron élevée, Aluminium Indium Nitrure Mixte, Nitrure de gallium, Hétérostructure, GaN.

English descriptors

KwdEn :
- Aluminium Indium Nitrides Mixed, Atomic force microscopy, Crystallinity, Gallium nitride, Growth mechanism, Heterostructures, High electron mobility transistors, Interfacial layer, Island structure, Surface morphology, Thickness, Transmission electron microscopy.

Abstract

In the investigated InAlN/GaN layers, it is shown that the surface morphology and the crystallinity of the alloy critically depend on the In composition. Atomic force microscopy artalvsis points out that step flow growth is not easily attained in this system. When the InAlN or AIN interlayer thickness is increased, the growth mode becomes three-dimensional. However, the formed islands are hundred of nanometers apart, and were not observed in the transmission electron microscope.

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Pascal:10-0292463

Le document en format XML

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<term>Growth mechanism</term>
<term>Heterostructures</term>
<term>High electron mobility transistors</term>
<term>Interfacial layer</term>
<term>Island structure</term>
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<term>Thickness</term>
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<term>Epaisseur</term>
<term>Mécanisme croissance</term>
<term>Microscopie électronique transmission</term>
<term>Structure îlot</term>
<term>Transistor mobilité électron élevée</term>
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<front><div type="abstract" xml:lang="en">In the investigated InAlN/GaN layers, it is shown that the surface morphology and the crystallinity of the alloy critically depend on the In composition. Atomic force microscopy artalvsis points out that step flow growth is not easily attained in this system. When the InAlN or AIN interlayer thickness is increased, the growth mode becomes three-dimensional. However, the formed islands are hundred of nanometers apart, and were not observed in the transmission electron microscope.</div>
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<fC01 i1="01" l="ENG"><s0>In the investigated InAlN/GaN layers, it is shown that the surface morphology and the crystallinity of the alloy critically depend on the In composition. Atomic force microscopy artalvsis points out that step flow growth is not easily attained in this system. When the InAlN or AIN interlayer thickness is increased, the growth mode becomes three-dimensional. However, the formed islands are hundred of nanometers apart, and were not observed in the transmission electron microscope.</s0>
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<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<fC03 i1="11" i2="X" l="FRE"><s0>Nitrure de gallium</s0>
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<s5>16</s5>
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<fC03 i1="12" i2="3" l="ENG"><s0>Heterostructures</s0>
<s5>16</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>GaN</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fN21><s1>186</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>European Materials Research Society (E-MRS) </s1>
<s3>Warsaw POL</s3>
<s4>2009-09-14</s4>
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The structure of InAlN/GaN heterostructures for high electron mobility transistors

The structure of InAlN/GaN heterostructures for high electron mobility transistors

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

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